Switchable half-metallicity in A-type antiferromagnetic NiI2 bilayer coupled with ferroelectric In2Se3

Abstract Electrically controlled half-metallicity in antiferromagnets is of great significance for both fundamental research and practical application. Here, by constructing van der Waals heterostructures composed two-dimensional (2D) A-type antiferromagnetic NiI 2 bilayer (bi-NiI ) ferroelectric In Se 3 with different thickness, we propose that the realizable switchable bi-NiI proximate to (bi-In ). The polarization flipping bi-In successfully drives transition between half-metal semiconductor . This intriguing phenomenon attributed joint effect field-induced energy band shift interfacial charge transfer. Besides, easy magnetization axis also dependent on direction magnetic anisotropy heterostructure can be effectively manipulated strain. These findings provide not only a feasible strategy achieve control 2D antiferromagnets, but promising candidate design advanced nanodevices.